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| Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION With TO-126 package Complement to type BD676/678/680 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general-purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/BD677/BD679 Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD675 BD677 VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH BD679 BD675 BD677 SEM E Open emitter Open base OND IC TOR UC VALUE 45 60 80 45 60 80 UNIT V V BD679 Open collector VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature 5 4 7 0.1 V A A A W ae ae TC=25ae 40 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 3.12 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD675 V(BR)CEO Collector-emitter breakdown voltage BD677 BD679 BD675 V(BR)CBO Collector-base breakdown voltage BD677 BD679 V(BR)EBO VCEsat VBE(on) ICBO ICEO IEBO hFE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IE=5mA; IC=0 IC=1.5A; IB=30mA IC=1.5A ; VCE=3V IC=1mA; IE=0 IC=100mA; IB=0 CONDITIONS MIN 45 60 80 45 60 80 5 2.5 V V V mA mA mA V V TYP. MAX UNIT SYMBOL HAN INC SEM GE VEB=5V; IC=0 VCB=rated BVCBO; IE=0 Ta=100 ae VCE=1/2rated BVCEO; IB=0 OND IC TOR UC 2.5 0.2 2.0 0.5 5.0 IC=1.5A ; VCE=3V 750 2 Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors PACKAGE OUTLINE BD675/BD677/BD679 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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